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 BL
FEATURES
o o o o o o
GALAXY ELECTRICAL
B120 - - - B160
REVERSE VOLTAGE: 20 --- 60 V CURRENT: 1.0 A
SCHOTTKY BARRIER RECTIFIER
o Plastic package has Underwriters Laboratory 111 Flammability Classification 94V-0 For surface mounted applications Low profile package Built-in strain relief Metal silicon junction, majority carrier conduction High surge capability Low power loss,high effciency
DO - 214AC(SMA)
o For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications o Guardring for overvoltage protection
o o High temperature soldering guaranteed:250 C/10 111 seconds at terminals
MECHANICAL DATA
o Case:JEDEC DO-214AC,molded plastic over 1111passivated chip o Terminals:Solder plated, solderable per MIL-STD-750, 1111Method 2026 o Polarity: Color band denotes cathode end o Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
B120
Dev ice marking code Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ord rectified current at x TL(SEE FIG.1) Peak forw ard surge current 8.3ms single halfx sine-w ave superimposed on rated load(JEDEC x Method) Maximum instantaneous forw ard voltage at x 1.0A(NOTE.1) Maximum DC reverse current (NOTE.1) x @TA=25oC at rated DC blockjing voltage @TA =100oC
B130
30 21 30
B140
40 28 40 1.0 30.0
B150
50 35 50
B120OOOHB130OOOOIB140OOOOIB150
VRRM VRWS VDC I(AV) I FSM VF IR R|E R|E
JA JL
B160 OOOOUNITS B160
60 42 60 V V V A A 0.7 V mA
20 14 20
0.5 0.5 10.0 88.0 20.0 - 55 --- +125 - 55 --- +150
Typical thermal resitance (NOTE. 2) Storage temperature range Operating junction x and storage temperature range Storage temperature range
o
C/W
o
Tj TSTG
C C
o
NOTE: 1.Pulse test:300|I S pulse width,1%duty cy cle 2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm 2)copper pad areas
www.galaxycn.com
Document Number 0281013
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD DERATING CURVE
B120 - - - B160
FIG.2-- PEAK FORWARD SURGE CURRENT
50
1.0
AVERAGE FORWARD CURRENT,AMPERES
Resistive or inductive Load
PEAK FORWARD SURGE CURRENT,AMPERES
40
TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method)
O
30
0.5
20
0 50 60
P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS
10
70 80
90 100 110 120 130 140 150 160 170
0
1
10
100
LEAD TEMPERATURE ae
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES
50
TJ=125 C
O
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100 10
B120-B140 B150-B160
10
TJ=100 C
O
1
Puise Width=300 1%DUTY CYCLE
S
1
TJ=125 C
0
0.1
TJ=75 C
0
0.1
TJ=25 C
O
0.01
TJ=25 0C
0.01 0
B120-B140 B150-B160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001 0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
400
TJ=25 C f=1.0MHz Vsig=50mVp-p
0
100
10 0.1
B120-B140 B150-B160
1
10
100
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0281013
BLGALAXY ELECTRICAL
2.


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